JPH0727630Y2 - メモリ装置 - Google Patents
メモリ装置Info
- Publication number
- JPH0727630Y2 JPH0727630Y2 JP1988020819U JP2081988U JPH0727630Y2 JP H0727630 Y2 JPH0727630 Y2 JP H0727630Y2 JP 1988020819 U JP1988020819 U JP 1988020819U JP 2081988 U JP2081988 U JP 2081988U JP H0727630 Y2 JPH0727630 Y2 JP H0727630Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive layer
- capacitive element
- memory cells
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988020819U JPH0727630Y2 (ja) | 1988-02-19 | 1988-02-19 | メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988020819U JPH0727630Y2 (ja) | 1988-02-19 | 1988-02-19 | メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01125560U JPH01125560U (en]) | 1989-08-28 |
JPH0727630Y2 true JPH0727630Y2 (ja) | 1995-06-21 |
Family
ID=31237508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988020819U Expired - Lifetime JPH0727630Y2 (ja) | 1988-02-19 | 1988-02-19 | メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0727630Y2 (en]) |
-
1988
- 1988-02-19 JP JP1988020819U patent/JPH0727630Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01125560U (en]) | 1989-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5089869A (en) | Semiconductor memory device | |
JPH0775247B2 (ja) | 半導体記憶装置 | |
KR930010823B1 (ko) | 반도체 기억장치 | |
KR20150140299A (ko) | 반도체 장치 및 그 제조 방법 | |
KR940010833B1 (ko) | 다이나믹형 반도체메모리 | |
JP4608091B2 (ja) | 強誘電体記憶素子 | |
JPS63239969A (ja) | メモリ装置 | |
KR920008938A (ko) | 스택캐패시터 및 그제조방법 | |
JPH0727630Y2 (ja) | メモリ装置 | |
JPH0685427B2 (ja) | 半導体記憶装置 | |
JP2002313954A (ja) | 半導体記憶装置およびその製造方法 | |
KR960012507A (ko) | 반도체 기억장치와 그 제조방법 | |
JPH10163455A (ja) | 半導体素子のキャパシタ及びその製造方法 | |
JPH0617320Y2 (ja) | メモリ装置 | |
US6545325B2 (en) | Semiconductor device and fabrication method thereof | |
KR100334575B1 (ko) | 반도체 메모리 제조 방법 | |
KR100344773B1 (ko) | 반도체장치의 캐패시터 및 그 레이아웃 | |
KR0161809B1 (ko) | 적층형 박막 트랜지스터를 가진 반도체 메모리장치 | |
JPH04365375A (ja) | 半導体記憶装置およびその製造方法 | |
JPS63209159A (ja) | 1トランジスタ型ダイナミツクメモリセル | |
KR0133831B1 (ko) | 에스램(SRAM) 캐패시턴스(Capacitance)가 증가된 에스램 제조방법 | |
JPS60254768A (ja) | 半導体記憶装置 | |
JPS6068647A (ja) | 半導体記憶装置 | |
JPH06326264A (ja) | 半導体記憶装置 | |
JP2562460B2 (ja) | ダイナミック・ランダム・アクセス・メモリ装置およびその製造方法 |